低阻值In掺杂CdZnTe晶体的退火改性  

Upgradation of Low Resistance In-doped CdZnTe Crystal by Annealing

作　　者：俞鹏飞[1] 介万奇[1] 

机构地区：[1]西北工业大学材料科学与工程学院,西安710072

出　　处：《人工晶体学报》2010年第1期21-24,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50872111)

摘　　要：以Cd1-yZny合金作退火源,对采用改进的垂直布里奇曼法(MVB)生长的In掺杂的Cd0.9Zn0.1Te晶片进行退火改性。结果表明:与退火前相比,退火后晶片的成分均匀性提高,Cd、Zn和Te三种元素的含量更接近理想的化学计量比,平均红外透过率由12%提高到59%,电阻率从3.5×106Ω.cm提高到5.7×109Ω.cm,且在PL谱中出现了代表晶体质量的(D0,X)发光峰。在合适的条件下对低阻值In掺杂的CdZnTe晶体进行退火改性可较好的提高晶体的性能。As-grown Indium doped Cd0.9Zn0.1 wafer prepared by MVB method was annealed using Cd1-yZny alloy source to control vapor pressure.The results show that after annealing,the concentration homogeneity of the In-doped CdZnTe wafer is improved,and the atomic ratios of Cd,Zn and Te become close to the theoretical stoichiometric proportions,the average IR transmittance increases from 12% to 59%,the resistivity is enhanced from 3.5×106 Ω·cm to 5.7×109 Ω·cm,and the （D0,X） peak representing the quality of crystal appears in PL spectrum.These changes indicate that the annealing treatment can commendably upgrade the performance of low resistance CdZnTe crystal in the proper circumstances.

关 键 词：CDZNTE晶体 退火 红外透过率 PL谱 

分 类 号：TN304.2[电子电信—物理电子学]