Yb:Lu_3Al_5O_(12)晶体的生长及缺陷研究  

Study on Growth and Defect of Yb:Lu_3Al__5O_(12) Crystal

作　　者：王晓丹[1] 潘涛[1] 臧涛成[1] 马春兰[1] 徐晓东[2] 徐军[3] 曾雄辉[4] 

机构地区：[1]苏州科技学院物理科学与技术系,苏州215009 [2]中国科学院上海光学精密机械研究所,上海201800 [3]中国科学院上海硅酸盐研究所,上海201800 [4]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123

出　　处：《人工晶体学报》2010年第1期57-61,共5页Journal of Synthetic Crystals

摘　　要：采用提拉法生长Yb3+掺杂浓度为10at%的Yb:Lu3Al5O12(Yb:LuAG)晶体。对晶体的结晶质量、晶胞参数、分凝系数等进行了表征。采用化学腐蚀的方法,利用光学显微镜和扫描电镜相结合研究了晶体中的缺陷。结果表明晶体具有较好的结晶质量,Yb3+的掺入不会改变LuAG的晶体结构。观察到Yb:LuAG晶体(111)面上呈三角锥形的位错蚀坑和由小面引起的晶体应力双折射现象,并提出了减少缺陷,提高晶体质量的方法。Yb∶Lu3Al5O12（Yb∶LuAG） crystal with doping Yb3＋ concentration 10 at% was grown by the Czochralski method.Crystallized quality,cell parameter and separation coefficient of the crystal were characterized.After chemical corrosion,defects in the crystal were observed by Leitz optical microscope and scanning electron microscope （SEM）.All results showed that crystallized quality of the crystal is good and the structure of LuAG crystal isn＇ t changed by doping Yb3＋.Triangle dislocation pits located in （111） plane and stress birefringence of the crystal generated from facet were observed.The method of reducing defect and improving crystal quality was pointed out.

关 键 词：Yb:LuAG晶体 晶胞参数 位错 应力 

分 类 号：O782[理学—晶体学]