KDP晶体生长的溶液流动和物质输运计算  

Numerical Simulation of the Flow and Mass Transfer in the Growth of KDP Crystals from Solution

作　　者：王晓丁[1] 李明伟[1] 曹亚超[1] 刘玉姗[1] 

机构地区：[1]重庆大学动力工程学院,重庆400030

出　　处：《人工晶体学报》2010年第1期88-94,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50676113;50976127)

摘　　要：本文采用有限容积法,对KDP晶体生长过程中溶液的流动和物质输运进行了数值模拟。结果表明:随着入口溶液流动速度的增大,籽晶的上表面因自然对流而引起的抽吸作用减小,表面过饱和度的最小值沿x正向发生右移,其上表面的剪切力先减小后增大。随着入口溶液过饱和度的增大,籽晶上表面剪切力增大。不同尺寸的籽晶表面过饱和度的分布差异较大。籽晶的生长边界层厚度与溶液流动密切相关,入口溶液流动速度越大,厚度越小,但其受入口溶液过饱和度的影响较小。Numerical simulations of the flow and mass transfer involved in the growth of KDP crystals had been performed by the finite volume method.The results showed that the pumping action at the upper surface of the seed crystal cause by the natural convection decreases,the minimum of the surface supersaturation has a right shift along the positive x-axis and the shear stress at the surface firstly increases and then decreases as the inlet velocity increasing.The shear stress increases with the increase of the inlet supersaturation.The distribution of the surface supersaturation has an obvious difference when changing the geometries of the seed crystal.The thickness of the growth boundary layer is associated closely with the fluid flow,but it is influenced slightly with the inlet supersaturation.

关 键 词：KDP晶体 数值模拟 表面过饱和度 剪切力 生长边界层 

分 类 号：O614[理学—无机化学]