CdZnTe晶片的Raman光谱研究  

Study on Raman Spectrum of CdZnTe Wafer

作　　者：曾冬梅[1] 王涛[2] 周海[1] 杨英歌[1] 

机构地区：[1]北京石油化工学院材料科学与工程系,北京102617 [2]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《人工晶体学报》2010年第1期221-225,231,共6页Journal of Synthetic Crystals

基　　金：西北工业大学凝固技术国家重点实验室开放课题(SKLSP201005)

摘　　要：利用Raman光谱技术研究了CdZnTe晶片表面处理方法、激光功率及波长变化对CdZnTe晶片的Raman谱线影响。研究表明:CdZnTe晶片分别经过机械抛光、Br-MeOH溶液处理以及Br-MeOH溶液+KOH/甲醇溶液处理后,由于表面晶格完整性的改变,Raman光谱出现了明显变化。采用514.5nm、632.8nm及785nm激光激发CdZnTe晶片时,晶片的Raman波谱也有所不同,其中用785nm激光激发样品,荧光发光峰位于100～200cm-1范围,掩盖了晶片Raman特征峰。在对CdZnTe晶片做Raman测试时,尽可能选择较低功率。The effects of surface treatments,laser power and wavelength changes on Raman spectrum of CdZnTe wafers were studied.The experiment shows that mechanical polishing,Br-MeOH solution and Br-MeOH ＋ KOH/MeOH solution treatment can lead to the changes of lattice perfection of CdZnTe wafer surface,which make Raman spectrum exhibit greater variation.Raman scattering spectra of CdZnTe wafers were also different at 514.5 nm,632.8 nm and 785 nm laser excitation wavelengths,and Raman scattering spectra of basic phonon vibrations from CdZnTe wafer were submergence by the fluorescence signals in range 100-200 cm-1.we should choose lower power of laser when Raman spectra of CdZnTe wafer were measured.

关 键 词：CDZNTE RAMAN光谱 表面处理 激光功率 

分 类 号：TN304.26[电子电信—物理电子学]