两步法制备Y_2O_3掺杂ZnO压敏瓷  

Y_2O_3-doped ZnO-based Varistors Ceramics by Two-step Sintering Method

作　　者：徐东[1] 巫欣欣[2,3] 程晓农[1] 张剑平[2] 施利毅[2] 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013 [2]上海大学纳米科学与技术研究中心,上海200444 [3]上海大学理学院,上海200444

出　　处：《材料导报》2010年第6期78-79,85,共3页Materials Reports

基　　金：上海市科委技术创新人才团队建设专项项目(06DZ05902)

摘　　要：采用两步烧结制备了Y2O3掺杂ZnO压敏瓷,其电位梯度为863～1330V/mm,非线性系数为27.0～49.7,漏电流为0.55～1.13μA。研究结果表明,当Y2O3的掺杂量为1.00%(摩尔分数)时,压敏瓷电性能最好,电位梯度为1330V/mm,非线性系数为49.7,漏电流为0.76μA。Y2O3-doped ZnO-based varistor ceramics are prepared by two-step sintering method, the voltage gradient is 863-1330V/mm, non-linear coefficient is 27.0-49.7, and leakage current is 0. 55-1. 13μA. The results show that Y2O3-doped ZnO-based varistor ceramics exhibit comparatively ideal comprehensive electrical properties when adding 1.00mol% Y2O3, the threshold voltage is 1330V/mm, the nonlinear coefficient is 49. 7, and the leakage current is 0. 76μA.

关 键 词：压敏瓷 两步烧结 稀土 显微组织 电性能 

分 类 号：TN304.93[电子电信—物理电子学]