AlInN光电薄膜的研究进展  

Research Progress in AlInN Optoelectronic Films

作　　者：芦伟[1] 徐明[1,2] 董成军[1] 魏屹[1] 

机构地区：[1]四川师范大学固体物理所低维结构物理实验室,成都610068 [2]中国科学院国际材料物理中心,沈阳110016

出　　处：《材料导报》2010年第7期132-137,共6页Materials Reports

基　　金：四川省科技厅应用基础研究项目(2006J13-052)

摘　　要：AlInN三元合金是优良的Ⅲ-Ⅴ族氮化物半导体材料,具有优良的光学和电学性能,在光电子器件应用方面具有广阔的应用前景。详细评述了近年来AlInN薄膜材料在生长技术、晶体结构、表面形貌、热学特性、光电特性等方面的研究,为AlInN三元合金在光电方面的基础和应用研究提供了重要参考。AlInN is one of Ⅲ-V nitride semiconductor materials with excellent optical and electrical properties, and has vast potential in photoelectronic device application. The recent studies on the growth methods, crystal structures, surface morphologies, thermal characteristics, and optoelectronic properties of AlInN films were reviewed in detail in this article, which is promising for exploring applicable Ⅲ-V nitride semiconductor materials in basic and/or applied optics, electronics, and opto-electronics.

关 键 词：AlInN薄膜 制备方法 特性 应用 

分 类 号：O484[理学—固体物理]