电子束束流密度对冶金硅中杂质磷的影响  

Effect of Beam Density of Electron Beam on Phosphorus Impurity in Metallurgical Grade Silicon

作　　者：姜大川[1,2] 谭毅[1,2] 董伟[1,2] 王强[1,2] 彭旭[1,2] 李国斌[1,2] 

机构地区：[1]辽宁省太阳能光伏系统重点实验室,辽宁大连116085 [2]大连理工大学材料科学与工程学院,辽宁大连116085

出　　处：《材料工程》2010年第3期18-21,共4页Journal of Materials Engineering

基　　金：辽宁省重大攻关计划(2006222007)

摘　　要：采用电子束设备对多晶硅进行熔炼,设计熔炼功率和时间相同、降束时间不同的三组实验,评价硅中杂质磷在熔炼及凝固过程中的去除效果。根据熔炼后硅锭的杂质分布特点推导出表征硅中杂质磷的去除率公式,经计算得到去除率为80%以上,并由磷的蒸发方程计算出在本实验中当电子束熔炼多晶硅锭的束流密度在235mA之上时,硅中的磷都可以被蒸发去除。In order to evaluate the effect of dephosphorization in silicon during melting and solidification,three-group electron beam melting experiments with the same melting power but different time for extinguishing beam density were carried out.According to the distribution of the phosphorus content in the obtained ingot,the formulas for the estimation of the phosphorus content in silicon is developed and the removal rate of phosphorus is calculated to be over 80%.Phosphorus in silicon could be effectively removed by evaporation when the beam density is over 235mA.

关 键 词：电子束 冶金硅 去除磷 

分 类 号：TF114.17[冶金工程—冶金物理化学]