Properties of the ITO layer in a novel red light-emitting diode  

作　　者：张勇辉 郭伟玲 高伟 李春伟 丁天平 

机构地区：[1]Beijing Optoelectronics Technology Laboratory,Beijing University of Technology

出　　处：《Journal of Semiconductors》2010年第4期9-13,共5页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(Nos.2008AA03Z402, SQ200703Z431230);the Beijing National Science Foundation of China(No.4092007);the Talent Promoting Education of Beijing, China(No.05002015200504).

摘　　要：An optically transparent electrode, indium tin oxide （ITO） film is fabricated by vacuum E-beam evaporation. The thermal annealing effects on the ITO/GaP contact have been investigated by means of the transmission line model method. Under 435 ℃, with rapid thermal annealing for 40 s in N2 ambient, the ITO contact resistance reaches the minimized value of 4.3 × 10^-3 Ω·cm^2 . The results from Hall testing and Auger spectra analysis indicate that the main reasons for the change of the contact resistance are the difference in the concentration of carriers and the diffusion of In, Ga, O. Furthermore, the reliability of AIGalnP LEDs with a 300-nm thickness transparent conducting ITO film is studied. The increase of LED chip voltage results from the degradation of ITO film. Moreover the difference between the thermal expansion coefficient of GaP and ITO results in the invalidation of the LED chip.An optically transparent electrode, indium tin oxide （ITO） film is fabricated by vacuum E-beam evaporation. The thermal annealing effects on the ITO/GaP contact have been investigated by means of the transmission line model method. Under 435 ℃, with rapid thermal annealing for 40 s in N2 ambient, the ITO contact resistance reaches the minimized value of 4.3 × 10^-3 Ω·cm^2 . The results from Hall testing and Auger spectra analysis indicate that the main reasons for the change of the contact resistance are the difference in the concentration of carriers and the diffusion of In, Ga, O. Furthermore, the reliability of AIGalnP LEDs with a 300-nm thickness transparent conducting ITO film is studied. The increase of LED chip voltage results from the degradation of ITO film. Moreover the difference between the thermal expansion coefficient of GaP and ITO results in the invalidation of the LED chip.

关 键 词：indium tin oxide GAP contact resistance RELIABILITY 

分 类 号：TN312.8[电子电信—物理电子学]