Ti/WSi/Ni ohmic contact to n-type SiCN  

作　　者：程文娟 钱燕妮 马学鸣 

机构地区：[1]Department of Physics,East China Normal University

出　　处：《Journal of Semiconductors》2010年第4期14-16,共3页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60606004).

摘　　要：Ti/WSi/Ni contact to n-type SiCN was investigated using the circular transmission line method. Current-voltage characteristics, X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the contacts before and after annealing. It is shown that the conducting behavior of the contacts is dependent on the annealing temperature. After annealing at 900℃ or above, ohmic contacts with specific contact resistivity were achieved. The 1000-℃-annealed contact exhibits the lowest specific contact of 3.07 × 10^-5 Ω·cm^2. The formation of ohmic contact with low specific contact resistivity was discussed.Ti/WSi/Ni contact to n-type SiCN was investigated using the circular transmission line method. Current-voltage characteristics, X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the contacts before and after annealing. It is shown that the conducting behavior of the contacts is dependent on the annealing temperature. After annealing at 900℃ or above, ohmic contacts with specific contact resistivity were achieved. The 1000-℃-annealed contact exhibits the lowest specific contact of 3.07 × 10^-5 Ω·cm^2. The formation of ohmic contact with low specific contact resistivity was discussed.

关 键 词：SICN ohmic contact electrical property 

分 类 号：TN304.24[电子电信—物理电子学]