An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure  

作　　者：蒲红斌 曹琳 任杰 陈治明 南雅公 

机构地区：[1]Xi'an University of Technology

出　　处：《Journal of Semiconductors》2010年第4期17-19,共3页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60876050);the Special Scientific Research Project of Shaan Xi Provincial Department of Education,China(No.08JK367).

摘　　要：An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively.An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively.

关 键 词：SiC/SiCGe SUPERJUNCTION optically controlled transistor 

分 类 号：TN323.4[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]