Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor  

作　　者：张雍 杨建红 蔡雪原 汪再兴 

机构地区：[1]Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University [2]School of Electronic and Information Engineering,Lanzhou Jiaotong University

出　　处：《Journal of Semiconductors》2010年第4期20-24,共5页半导体学报（英文版）

摘　　要：The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.

关 键 词：SIT OSIT potential barrier height normalized approach I-V characteristics 

分 类 号：TN32[电子电信—物理电子学]