EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy  

作　　者：席晓文 柴常春 任兴荣 杨银堂 张冰 洪潇 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2010年第4期32-36,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60776034).

摘　　要：The response of a bipolar transistor （BJT） under a square-wave electromagnetic pulse （EMP） with different injecting voltages is investigated. Adopting the curve fitting method, the relationship between the burnout time, the damage energy and the injecting voltage is obtained. Research shows that the damage energy is not a constant value, but changes with the injecting voltage level. By use of the device simulator Medici, the internal behavior of the burned device is analyzed. Simulation results indicate that the variation of the damage energy with injecting voltage is caused by the distribution change of hot spot position under different injection levels. Therefore, the traditional way to evaluate the trade-off between the burnout time and the injecting voltage is not comprehensive due to the variation of the damage energy.The response of a bipolar transistor （BJT） under a square-wave electromagnetic pulse （EMP） with different injecting voltages is investigated. Adopting the curve fitting method, the relationship between the burnout time, the damage energy and the injecting voltage is obtained. Research shows that the damage energy is not a constant value, but changes with the injecting voltage level. By use of the device simulator Medici, the internal behavior of the burned device is analyzed. Simulation results indicate that the variation of the damage energy with injecting voltage is caused by the distribution change of hot spot position under different injection levels. Therefore, the traditional way to evaluate the trade-off between the burnout time and the injecting voltage is not comprehensive due to the variation of the damage energy.

关 键 词：BJT square-wave EMP injecting voltage damage energy 

分 类 号：TN322.8[电子电信—物理电子学]