低相变场细电滞回线(Pb,La)(Zr,Sn,Ti)O_3反铁电陶瓷的研究  

Study of low phase transition electric-field and slim-loop hysteresis of (Pb,La)(Zr,Sn,Ti)O_3 antiferroelectric ceramics

作　　者：郑琼娜[1] 杨同青[1] 魏坤[1] 姚熹[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《功能材料》2010年第3期531-532,536,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10874130);教育部重点资助项目(108055);上海浦江人才计划;电子薄膜与器件国家重点实验室的资助

摘　　要：对远离反铁电-铁电准同型相界的(Pb,La)(Zr,Sn,Ti)O3反铁电组分进行Ba2+掺杂,制备出了细电滞回线、低相变电场的反铁电陶瓷,反铁电-铁电相变电场仅为1.5kV/mm,电场回滞减小到0.2kV/mm,并且极化强度和应变量随电场增大几乎呈线性变化,可通过调节电场大小得到不同的应变量,有利于开辟这类材料新的应用领域。The Ba2＋ additions antiferroelectric ceramics with compositions far from the morphotropic phase boundary show slim-loop hysteresis.The phase transition electric-field lower to 1.5kV/mm,the hysteresis of electric-field reduces to 0.2kV/mm.The shape of hysteresis loop is slanted,and the polarization nearly increases linearly with the increasing of electric-field.The magnitude of strain is easy to control by the applied electric-field,and it is desired for other applications.

关 键 词：PZST 反铁电 电致应变 场诱相变 

分 类 号：TB321[一般工业技术—材料科学与工程]