电容提取的新摄动方程及小波边界元解法  

Improved Perturbation Approach and Fast Wavelet Galerkin BEM for Capacitance Extraction

作　　者：校金友[1] 曹衍闯[1] Johannes Tausch 张铎[1] 

机构地区：[1]西北工业大学航天学院,陕西西安710072 [2]Department of Mathematics,Southern Methodist University

出　　处：《计算物理》2010年第2期240-244,共5页Chinese Journal of Computational Physics

基　　金：西北工业大学博士论文创新基金(CX200601);国家自然科学基金(10674109)资助项目

摘　　要：提出一种解决含高电容率介质结构电容提取问题的新摄动方程,使计算时间减少一半.建立新摄动方程的快速小波Galerkin边界元解法.算例证明新摄动方程精度高且受介质电容率影响小;用小波Galerkin边界元求解的效率高,时间和内存消耗达到最优O(N)(N为未知量数目).We describe an improved perturbation approach for electrostatic analysis of three-dimensional structures consisting of dielectrics with high-permittivity ratios. Unlike original perturbation approach, the new approach uses only one system matrix with different right hand sides. A fast wavelet Galerkin boundary element method （WGBEM） is used to solve integral equations. Compared with wavelets defined in parameter spaces in a conventional WGBEM, the wavelets here are directly constructed on usual boundary element triangulation. It enables the proposed WGBEM to solve electrostatic problems in complicated geometries, unstructured meshes and comparatively coarse discretizations. Numerical results show that the improved perturbation approach combined with WGBEM has high accuracy and almost linear computational complexity.

关 键 词：电容提取 等效电荷法 高电容率 小波Galerkin边界元 

分 类 号：O459[理学—无线电物理]