Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films  

作　　者：雷通 王小平 王丽军 吕承瑞 章诗 朱玉传 

机构地区：[1]College of Science, University of Shanghai for Science and Technology, Shanghai 200093

出　　处：《Chinese Physics Letters》2010年第4期231-233,共3页中国物理快报（英文版）

摘　　要：We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.

关 键 词：Condensed matter: electrical magnetic and optical Electronics and devices Optics quantum optics and lasers Nanoscale science and low-D systems 

分 类 号：TN383.1[电子电信—物理电子学] O484.43[理学—固体物理]