Weak Gate Effect in 1,3-Benzenedithiol Molecular Device  

作　　者：苏文勇 罗毅 

机构地区：[1]Department of Physics, Beijing Institute of Technology, Beijing 100081 [2]Department of Theoritial Chemistry, Royal Institute of Technology, AlbaNova S-10691, Stockholm, Sweden

出　　处：《Chinese Physics Letters》2010年第4期246-249,共4页中国物理快报（英文版）

摘　　要：We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.

关 键 词：Condensed matter: electrical magnetic and optical Electronics and devices Surfaces interfaces and thin films 

分 类 号：O561.2[理学—原子与分子物理] O353.2[理学—物理]