CHF3双频电容耦合放电等离子体特性研究  

CHF_3 dual-frequency capacitively coupled plasma

作　　者：胡佳[1] 徐轶君[1] 叶超[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏省薄膜材料重点实验室,苏州215006

出　　处：《物理学报》2010年第4期2661-2665,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10575074,10975105,10635010)资助的课题~~

摘　　要：研究了用于SiCOH低介电常数薄膜刻蚀的CHF3气体在13.56MHz/2MHz,27.12MHz/2MHz和60MHz/2MHz双频电容耦合放电时的等离子体性质.发现2MHz低频源功率的增大主要导致F基团密度的增大;而高频频率从13.56,27.12增大到60MHz,导致CF2基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系,提出CF2基团的产生主要通过电子-中性气体碰撞,而F基团的产生是离子-中性气体碰撞的结果.This paper investigates the intermediate gas phase in the CHF3 dual-frequency capacitively couple plasma（DF-CCP） driven by the high-frequency（HF） of 13.56 MHz,27.12 MHz or 60 MHz and the low-frequency（LF） of 2 MHz power sources,which was used to etch the SiCOH low dielectric constant（low-k） films.The increasing of 2 MHz LF power led to the increase of F radical concentration,and the increasing of HF frequency from 13.56 MHz and 27.12 MHz to 60 MHz led to the increase of CF2 concentration and a poor spatial uniformity of F radical between the electrodes.According to the electron temperature distribution at different LF power and HF frequency,and the dependence of ion energy on the high frequency,the CF2radicals were found to come from the CHF3 dissociation by the electron-neutrals collisions,and the F radical from the CHF3 dissociation induced by the ions-neutrals thermal collisions.

关 键 词：双频电容耦合放电 CHF3等离子体 

分 类 号：TN401[电子电信—微电子学与固体电子学]