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机构地区:[1]南昌大学材料科学与工程学院,江西南昌330031 [2]纳米技术工程研究中心,江西南昌330047 [3]近代物理研究所,江西南昌330031
出 处:《南昌大学学报(理科版)》2010年第1期47-51,共5页Journal of Nanchang University(Natural Science)
基 金:国家自然科学基金资助项目(60768001;10464002)
摘 要:运用密度矩阵的方法研究了半导体单量子点处于紧束缚态下的色散和吸收特性,数值模拟计算结果显示:探测场比较弱的条件下,调节两耦合光场之间的相对大小,不仅可以实现正常色散大小改变,而且可以实现正常色散到反常色散的突变;模拟计算结果还显示:增大探测场大小,同时改变探测场和耦极矩的夹角,也可以实现色散态的突变。比较吸收曲线图,探测场较弱时的吸收明显较探测场较强时大;探测场较强时,改变探测场和耦极矩的夹角,可使得共振点两侧的吸收峰略有增强,且其间隔也在增大。The density matrix approach has been employed to study analytically the property of dispersion and absorption in semiconductor single quantum dot under the confinement regime. The numerical simulation results show that under the condition of weak probe field and adjusting the two coupling field relative magnitude, the magnitude of normal dispersion is changed and the abrupt change of normal and anomalous dispersion takes place. Enhancement the magnitude of probe field and change the angle between probe field and dipole, the steep change of dispersion states occur. Comparing the absorption curves we find the absorption under weak probe is more power than the strong case. The stronger probe field and change the angle between probe field and dipole, the absorption peak is higher between the resonance point and the space increases.
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