自偏置的多段曲率校正带隙基准源  

A self-bias cascode multi-range curvature compensated bandgap voltage reference

作　　者：赵玉月[1] 龚敏[1] 邬齐荣[1] 陈畅[1] 

机构地区：[1]四川大学物理科学与技术学院微电子技术四川省重点实验室,成都610064

出　　处：《四川大学学报（自然科学版）》2010年第2期293-296,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：典型的带隙基准电压源电路是由CMOS工艺产生的具有负温度系数的寄生横向BJT的发射结电压V_(EB)和具有正温度系数的热电压V_t相补偿产生零温度系数的基准带隙电压源.但是V_(EB)与温度不是线性关系,因此V_(REF)需要被校正.本文介绍了一种高精度自偏置多段二次曲率补偿的CMOS带隙基准电压源.采用0.5μm CMOS工艺、工作电压为3.3 V,该芯片室温下功耗为94μW.设计在0℃～75℃有效温度系数达到了0.7 ppm/℃.A typical bandgap voltage circuit is built up with the negative temperature coefficient of VEB across the base-emitter of the parasitic BJT in CMOS process and the positive temperature coefficient of Vt. But the temperature dependence of VEB is not linear, therefore, the VREF need be corrected. In this paper, a high precision self-bias multi-range second order curvature compensated CMOS bandgap voltage reference has been described. The new proposed bandgap voltage reference is implemented in 0.5 μm CMOS technology and operates under 3.3 V supply voltage consuming 94 μW at room temperature. The effictive temperature coefficient of this circuit achieves 0.7 ppm/in the temperature ranging from 0 ℃to 75 ℃.

关 键 词：带隙基准电压 共源共栅电流镜 自偏置 低温度系数 二次曲率校正 

分 类 号：TN432[电子电信—微电子学与固体电子学]