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作 者:郭世海[1,2] 冯则坤[1] 王新林[2] 何华辉[1]
机构地区:[1]华中科技大学电子科学与技术系,武汉430074 [2]钢铁研究总院功能材料研究所,北京100086
出 处:《功能材料与器件学报》2010年第2期99-103,共5页Journal of Functional Materials and Devices
摘 要:采用普通陶瓷工艺制备了Gd掺杂的Co2Z型平面六角铁氧体3(Ba0.5Sr0.5O).2CoO.0.05Gd2O3.10.8Fe2O3,对其微结构和高频性能进行了研究。结果表明,少量掺杂Gd的Co2Z型铁氧体仍具有单相的Z型平面六角结构,其磁导率实部μ′明显提高,可达到13,而截止频率仍大于1GHz,具有较好的高频性能。随着烧结温度的提高,材料的磁导率实部μ′增大,但截止频率下降。少量Gd的掺杂对Co2Z型铁氧体的复介电常数值没有明显影响,但材料的铁电共振峰向高频区移动。Gd doped Co2 Z type hexagonal ferrite 3 ( Ba0. 5 Sr0.5 O) · 2CoO · 0.05 Gd2O3 ·1 0. 8 Fe2O3 WaS prepared by the conventional ceramic method. The mierostructures and high frequency properties of the material were investigated. The results show that the CO2Z ferrite doped with a small amount of Gd is also the single phase of Co2Z planar hexagonal structure. The addition of Gd in Co2Z ferrite can increase the real part μ' of complex permeability significantly. The Gd doped Co2Z ferrite exhibits excellent high frequency properties such as high initial permeability up to 13 and high cut - off frequency above 1 GHz. With increasing sintering temperature, the real part μ' of complex permeability increases and cut -off frequency goes down. The addition of Gd has no obvious effect on the complex dielectric constant of Co2Z ferrite, but the ferroeleetric resonance peak of Gd doped ferrite shifts to higher frequency region as a consequence.
分 类 号:TM273[一般工业技术—材料科学与工程]
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