二极管的径向绝缘设计及阴极特性研究  

Radial Insulation Design of the Diode and Cathode’s Trait Research

作　　者：伍友成[1] 杨宇[1] 耿力东[1] 郝世荣[1] 王敏华[1] 张南川[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《高压电器》2010年第4期40-42,共3页High Voltage Apparatus

摘　　要：介绍了二极管真空绝缘中真空沿面闪络的理论、绝缘结构设计的要点以及沿面闪络域值的估算方法,提出了二极管结构优化设计的思路和方法,通过数值计算对二极管的径向绝缘结构进行了设计优化,一方面降低了三相点的电场强度和绝缘体沿面电场强度,另一方面提高了绝缘体表面的沿面击穿场强。实验结果表明,优化后的二极管绝缘结构满足设计指标,在正常工作电压下未发生击穿现象,并进一步对天鹅绒阴极二极管发射电流的幅值特性和脉宽特性进行了初步研究。The theory on pulsed flashover on insulators surface in vacuum was introduced. The keys of diode insulation design in vacuum and the way of estimating flashover threshold were included. The method to optimize the diode insulation design in vacuum was presented. The insulation configuration was optimized by numerical simulation, the flashover threshold was increased and working field on insulator surface was depressed. So the insulation capability of the diode insulator is improved very much. The experiment results showed flashover didn＇t happen on the surface of the insulator. The research on velvet cathode＇s trait was carried, and got some results.

关 键 词：二极管 真空绝缘 沿面闪络 高功率 

分 类 号：TN31[电子电信—物理电子学]