脉冲激光沉积法制备Ca_3Co_4O_9热电薄膜的研究  

Study on the Thermoelectric Thin Films of Ca_3Co_4O_9 Using Pulsed-laser Deposition Techniques

作　　者：吴东[1] 李智东[1] 赵昆渝[1] 张辉[1] 葛振华[1] 张鹏翔[1] 

机构地区：[1]昆明理工大学材料与冶金工程学院,云南昆明650093

出　　处：《压电与声光》2010年第2期297-300,共4页Piezoelectrics & Acoustooptics

摘　　要：分别采用固相法和溶胶-凝胶(Sol-Gel)法制备了Ca3Co4O9热电陶瓷靶材,对Ca3Co4O9薄膜的成膜工艺及机制进行了分析与探讨,在此基础上,采用适当的靶材利用脉冲激光沉积(PLD)技术在(0001)晶向(c轴)的Al2O3衬底上生长了单相的Ca3Co4O9薄膜。通过X-射线衍射(XRD)仪、金相显微镜及扫描电镜(SEM)等表征手段,研究了靶材与薄膜的制备工艺对热电薄膜的物相、显微结构及形貌的影响。用直流四探针法测定了靶材和薄膜电阻率与温度的关系,结果表明,薄膜具有明显的半导体特性。The thermoelectric ceramic target material of Ca3Co409 was prepared by the solid reaction method and the Sol-Gel method. The technology and mechanism of synthesizing the thermoelectric thin films of the Ca3 Co4 09 were investigated. On this basis, by selecting the appropriate target, the thin films of the Ca3 Co4 09 were grown on （0001）-oriented （c-cut） Al203 substrates by the pulsed-laser deposition techniques （PLD）. The effects of the target material and the preparation process on the phase, microstructure and morphology were analyzed by XRD, metallograph,SEM and so on. The temperature dependence of the resistivity was measured by a standard four probes method,The results showed that the thin films exhibited obviously semiconductor behavior.

关 键 词：CA3CO4O9 热电陶瓷 热电薄膜 脉冲激光沉积(PLD) 

分 类 号：TN3[电子电信—物理电子学]