元素V掺杂对ZnO压敏效应的影响机理研究  

Effects of V-element Doping on the Current-Voltage Characteristics of ZnO Varistor

作　　者：王立惠[1] 甘国友[1] 孙加林[2] 严继康[1] 

机构地区：[1]昆明理工大学材料与冶金工程学院,云南昆明650093 [2]中国有色矿业集团有限公司,北京100055

出　　处：《压电与声光》2010年第2期304-306,共3页Piezoelectrics & Acoustooptics

摘　　要：研究了掺杂不同V2O5对ZnO陶瓷压敏特性的影响。实验表明,ZnO压敏电压随V元素掺杂量增加而随之升高,非线性系数随元素V掺杂量增加而先增大后减小,漏电流先减小后增大。分析认为,V元素掺杂对ZnO压敏材料电性能的影响不仅与电子的能级有关,与其自旋特性也紧密相关。ZnO陶瓷中掺杂的V元素在晶界偏析,其V元素都会产生局域磁矩,会对与其取向不同的自旋电子产生强的散射,这样可增大ZnO压敏陶瓷电阻率,使晶界产生非线性特性。The effects of amount of V205 doping on the current-voltage characteristics of ZnO varistor are studied. It was found that the breakdown voltage of ZnO gradient increased with the increase of the concentration of V-element, the nonlinearity coefficients will be greatly increased and then decreased, but leakage current densityde- creased and then increased. The current-voltage characteristics of ZnO arenot only decided by the electronic energy level structure, but also associated with electronic spin of V-elements. The V at the grain boundary of ZnO are gave rise to localized magnetic moments and the highly scattering to electronics with different spin orientation, favorable for increasing the resistivity and nonlinear characteristics of ZnO varistor.

关 键 词：压敏材料 电性能 过渡族元素 自旋相关输运 

分 类 号：TN304[电子电信—物理电子学]