0.35μm SiGe BiCMOS 10位1 GSPS单片直接数字频率合成器  

10-Bit 1 GSPS Monolithic DDFS Based on 0.35μm SiGe BiCMOS Process

作　　者：傅东兵 刘军[1,2] 张瑞涛[1,2] 严纲 俞宙[1,2] 李儒章 

机构地区：[1]模拟集成电路国家级重点实验室 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2010年第2期169-172,共4页Microelectronics

摘　　要：设计了一个基于SiGe BiCMOS工艺的高速数字频率合成器。该电路在一块芯片上集成了DDS核、分段式电流舵DAC、并/串接口、时钟控制逻辑等模块。芯片采用标准0.35μm SiGeBiCMOS工艺流片。测试结果表明,DDS能够生成高速、高质量的正弦/余弦捷变波形。A high-speed SiGe BiCMOS direct digital frequency synthesizer was designed, into which DDS core, segmented current-steering D/A converter, parallel/serial interface and clock circuits were integrated. The circuit was fabricated in 0. 35μm SiGe BiCMOS standard process. Test results showed that the DDS could generate high-speed and high-quality sine/cosine waveforms.

关 键 词：直接数字频率合成器 CORDIC DAC SIGE BICMOS 

分 类 号：TN741[电子电信—电路与系统]