2～12GHz CMOS超宽带低噪声放大器设计  

Design of 2-12 GHz Ultra-Wideband CMOS Low Noise Amplifier

作　　者：罗文远[1] 王春华[1] 杜四春[1] 

机构地区：[1]湖南大学计算机与通信学院,长沙410082

出　　处：《微电子学》2010年第2期243-247,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60776021)

摘　　要：提出了一种基于双反馈电流复用结构的新型CMOS超宽带(UWB)低噪声放大器(LNA),放大器工作在2～12 GHz的超宽带频段,详细分析了输入输出匹配、增益和噪声系数的性能。设计采用TSMC 0.18μm RF CMOS工艺,在1.4 V工作电压下,放大器的直流功耗约为13mW(包括缓冲级)。仿真结果表明,在2～12 GHz频带范围内,功率增益为15.6±1.4 dB,输入、输出回波损耗分别低于-10.4和-11.5 dB,噪声系数(NF)低于3 dB(最小值为1.96 dB),三阶交调点IIP3为-12 dBm,芯片版图面积约为712μm×614μm。A novel ultra-wideband （UWB） low noise amplifier （LNA） was presented, based on dual feedback current-reused topology, which operates in an ultra wideband range from 2 GHz to 12 GHz. Performance of input and output matching parameters, gain and noise figure was analyzed in detail. The LNA was designed in TSMC＇s 0. 18μm RF CMOS process. It consumes 13 mW of DC power, including buffer stage, from a 1.4 V supply. Simulation results showed that, in the frequency band ranging from 2 GHz to 12 GHz, the LNA achieved a power gain of 15.6 ±1.4 dB, an input/output return loss lower than -10. 4 dB/-11. 5 dB, respectively, an NF below 3 dB （1.96 dB in minimum）, and an IIP3 of -12 dBnx The circuit occupies a chip area of about 712μm×614μm.

关 键 词：超宽带 CMOS 低噪声放大器 电流复用 

分 类 号：TN722.3[电子电信—电路与系统]