Numerical Simulation of Hydrogen Dilution Effects on Deposition of Silicon Film at Atmospheric Pressure Radio-Frequency Argon Silane Plasma  

作　　者：庄娟 尚万里 刘莉莹 王德真 

机构地区：[1]School of Physics and Optoelectronic Technology, Dalian University of Technology

出　　处：《Plasma Science and Technology》2010年第1期71-75,共5页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China (Nos. 10775026, 50537020, and 50528707)

摘　　要：Based on the one-dimensional fluid model, the characteristics of homogeneous discharges with hydrogen diluted silane and argon at atmospheric pressure are numerically investigated. The primary processes of excitation and ionization and sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges are considered. The effects of hydrogen dilution on the densities of species （e, H, SiH3^＋, SiH3^-, SiH3,） are analyzed. The simulation results show that the highest densities of e, Si113^＋, H, SiH3^-, SiH3 correspond to the optimal dilution concentration of H2. The deposition rate of μc-Si：H film depends on the SiH3 concentration, and atomic hydrogen in the plasma is found to play an important role in the crystallization fraction of the deposited films. This model explains the effects of H2 dilution on the deposition rate and crystallized fraction of μc-Si：H film growth.Based on the one-dimensional fluid model, the characteristics of homogeneous discharges with hydrogen diluted silane and argon at atmospheric pressure are numerically investigated. The primary processes of excitation and ionization and sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges are considered. The effects of hydrogen dilution on the densities of species （e, H, SiH3^＋, SiH3^-, SiH3,） are analyzed. The simulation results show that the highest densities of e, Si113^＋, H, SiH3^-, SiH3 correspond to the optimal dilution concentration of H2. The deposition rate of μc-Si：H film depends on the SiH3 concentration, and atomic hydrogen in the plasma is found to play an important role in the crystallization fraction of the deposited films. This model explains the effects of H2 dilution on the deposition rate and crystallized fraction of μc-Si：H film growth.

关 键 词：PLASMA numerical simulation hydrogen dilution 

分 类 号：O53[理学—等离子体物理] O484.1[理学—物理]