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作 者:M. VILLA M. CALIXTO-RODRIGUEZ H. MARTINEZ J. C. POVEDA P. G. REYES P. ALTUZAR
机构地区:[1]Faculty of Sciences, Autonomous University of the State of Mexico, State of Mexico, Mexico [2]Institute of Physical Sciences, Autonomous National University of Mexico, 62210 Cuernavaca, Morelos, Mexico [3]Energy Research Center, Autonomous National University of Mexico, 62580 Temixco Morelos, Mexico
出 处:《Plasma Science and Technology》2010年第1期81-86,共6页等离子体科学和技术(英文版)
基 金:supported partially by DGAPA IN-105707-3, CONACyT 41072-F of Mexico Acknowledgments The authors are grateful to O. FLORES and A. SEGUNDO for helpful suggestions and comments. We would like to thank A. BUSTOS, A. GONZALEZ, R. BUSTOS, and Jose RANGEL for their technical assistance.
摘 要:Optical emission spectroscopy was applied for plasma characterization during erosion of substrates of asphaltene. The amount of 100 mg of asphaltene was carefully applied to an electrode and exposed to air plasma glow discharge at a pressure of 1.0 Tort. The plasma was generated in a stainless steel discharge chamber by an AC generator with a frequency of 60 Hz and an output power of about 60 W. The electron temperature was found to be 6.88 eV, and the ion density is about 3.5×10^16 cm^-3. As the asphaltene was exposed to the air plasma, the surface was etched. The emission from molecular bands CS2,O3, N2^+, NO, O2, CS, S2, CN, C7H7, C2, H2, C2^-, NiO, N2 and SO, and atomic line O, were observed and some of them were used to monitor the evolution of asphaltene erosion. The asphaltene weight was reduced gradually with an etching rate of about 0.844 mg/min, during the first 20 min.Optical emission spectroscopy was applied for plasma characterization during erosion of substrates of asphaltene. The amount of 100 mg of asphaltene was carefully applied to an electrode and exposed to air plasma glow discharge at a pressure of 1.0 Tort. The plasma was generated in a stainless steel discharge chamber by an AC generator with a frequency of 60 Hz and an output power of about 60 W. The electron temperature was found to be 6.88 eV, and the ion density is about 3.5×10^16 cm^-3. As the asphaltene was exposed to the air plasma, the surface was etched. The emission from molecular bands CS2,O3, N2^+, NO, O2, CS, S2, CN, C7H7, C2, H2, C2^-, NiO, N2 and SO, and atomic line O, were observed and some of them were used to monitor the evolution of asphaltene erosion. The asphaltene weight was reduced gradually with an etching rate of about 0.844 mg/min, during the first 20 min.
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