Three-Dimensional Modeling of Argon Discharge Characteristics of a Large-Scale Rectangular Surface-Wave Plasma Source  

作　　者：蓝朝晖 胡希伟 王文斗 刘明海 

机构地区：[1]Institute of Fluid Physics, China Academy of Engineering Physics [2]College of Electrical and Electronic Engineering, Huazhong University of Science and Technology [3]College of Electrical and Electronic Engineering, Huazhong University of Science and Technology

出　　处：《Plasma Science and Technology》2010年第2期129-133,共5页等离子体科学和技术（英文版）

摘　　要：A three-dimensional fluid model for surface-wave plasma （SWP）, to investigate the discharge characteristics of a rectangular SWP source working in a steady state, was presented. The simulation is performed for different gas pressures in argon and different deposited powers. The results showed that there is a peak of plasma density at a distance of 2 cm to 3 cm from the plasma-quartz interface whose position depends mainly on the gas pressure but not the deposited power. The spatial distributions of plasma parameters and their dependence on the gas pressure and deposited power are also presented and discussed. Using this model a good agreement between the simulation results and the available experimental data is obtained.A three-dimensional fluid model for surface-wave plasma （SWP）, to investigate the discharge characteristics of a rectangular SWP source working in a steady state, was presented. The simulation is performed for different gas pressures in argon and different deposited powers. The results showed that there is a peak of plasma density at a distance of 2 cm to 3 cm from the plasma-quartz interface whose position depends mainly on the gas pressure but not the deposited power. The spatial distributions of plasma parameters and their dependence on the gas pressure and deposited power are also presented and discussed. Using this model a good agreement between the simulation results and the available experimental data is obtained.

关 键 词：surface wave plasma electron density distribution electron temperature distribution 

分 类 号：O461.2[理学—电子物理学]