一种高电源抑制比带隙基准电压源的设计  

Design of high PSRR bandgap voltage reference

作　　者：刘军儒[1] 牛萍娟[1] 高铁成[1] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160

出　　处：《天津工业大学学报》2010年第2期60-62,共3页Journal of Tiangong University

基　　金：国家863计划资助项目(2006AA03A154);天津市科技支撑计划项目(07ZCKFGX02100)

摘　　要：采用共源共栅运算放大器作为驱动,设计了一种高电源抑制比和低温度系数的带隙基准电压源电路,并在TSMC 0.18μm CMOS工艺下,采用HSPICE进行了仿真.仿真结果表明:在-25～115℃温度范围内电路的温漂系数为9.69×10-6/℃,电源抑制比达到-100 dB,电源电压在2.5～4.5 V之间时输出电压Vref的摆动为0.2 mV,是一种有效的基准电压实现方法.A bandg/tp voltage reference circuit is designed which has high power supply rejection ratio （PSRR） and low temperature coefficient. In the design, the whole bandgap circuit has high PSRR through using Folded Cascode Operational Amplifier as the next stage. Based on the TSMC 0.18 μm CMOS model, the simulation results using HSPICE show that the temperature coefficient of the circuit is 9.69×10^-6/℃ between the temperature range of-25-115℃ and the PSRR is -100 dB. The bandgap output voltage Vref swing is 0.2 mV when the supply voltage is 2.5-4.5 V. Therefore, the design is an effective way to implement a bandgap voltage reference.

关 键 词：带隙基准电压源 电源抑制比 温度系数 

分 类 号：TN710.2[电子电信—电路与系统] TN86