n-on-p长波HgCdTe光伏器件的一种光谱现象解释  

A Spectral Phenomenon's Explanation of n-on-p Long Wavelength HgCdTe Photovoltaic Device

作　　者：袁绶章[1] 张鹏[1] 康蓉[1] 韩福忠[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2010年第4期223-225,共3页Infrared Technology

摘　　要：在对n-on-p长波HgCdTe光伏器件光谱测试中,发现对于前照式型器件,光谱在中短波区有时会出现一个小峰。通过叠加原理的方式理论计算分析认为这是由于n区的B-M效应和量子效率导致的。In the spectra measurement of front-illuminated n-on-p long wavelength HgCdTe photovoltaic device, it is found that a peak appears sometimes, between the short wavelength region to the middle wavelength. According to superposition principle, the theoretical calculation results point out the reason of the phenomenon is the B-M effect and quantum efficiency of n region.

关 键 词：碲镉汞 B—M效应 量子效率 相对响应光谱 理论计算 

分 类 号：TN215[电子电信—物理电子学]