高纯碲和镉中痕量杂质元素的辉光放电质谱分析  

The Analysis of High Purity Tellurium and Cadmium Using Glow Discharge Mass Spectrometry and Ablation Inductively Coupled Plasma Mass Spectrometry

作　　者：荣百炼[1] 胡赞东[1] 丛树仁[1] 韩福忠[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2010年第4期226-230,共5页Infrared Technology

摘　　要：采用辉光放电质谱(GD-MS)对碲、镉原材料中锂、硼、钠、铝、硅、铁、铜、锌、镓、砷、银、金、铅、铀等62个杂质元素进行了测试,并与激光烧蚀电感耦合等离子体质谱(LA-ICP-MS)所测的结果进行比较,对结果差异的潜在因素、个别元素含量异常偏大的原因进行了系统分析,着重论述VG9000辉光放电质谱仪的特点及痕量杂质分析优势。One purity tellurium and one purity cadmium were analyzed by glow discharge mass spectrometry （GD-MS）. Each sample was prepared accordingly and subsequently analyzed for a wide range of 62 elements. The results have been compared with those were analyzed by laser ablation inductive coupled plasma mass spectrometry （LA-ICP-MS）. Characteristics and advantages of analyzing trace impurity of VG9000 instrument are discussed.

关 键 词：辉光放电质谱(GD-MS) 激光烧蚀电感耦合等离子体质谱(LA-ICP-MS) 痕量杂质测定 高纯碲和镉 

分 类 号：TN215[电子电信—物理电子学]