Influence of charge carrier injection at emitter electrode/emitter interface on the performance of metal-base organic transistors  

作　　者：赵恺 邓家春 程晓曼 吴晓明 杨利营 华玉林 魏军 印寿根 

机构地区：[1]Key Laboratory of Display Materials and Photoelectric Devices of Education Ministry of China,Institute of Material Physics,and Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology [2]Singapore Institute of Manufacturing Technology

出　　处：《Optoelectronics Letters》2010年第3期195-198,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No.60676051);Tianjin Natural Science Foundation (Nos.07JCYBJC12700 and 06TXTJJC14603);Key Project of Chinese Ministry of Education (No.209007);Tianjin Key Discipline of MaterialPhysics and Chemistry

摘　　要：Pentacene-based metal-base organic transistors(MBOTs) are fabricated.The influence of the charge carrier injection efficiency at the emitter electrode/emitter interface on the device performance is investigated.It is found that the current modulation and the on/off ratio increase with the injection efficiency.By inserting poly(3,4-ethylenedioxythiophene)(PEDOT):PSS/m-MTDATA layers at the emitter electrode/emitter interface,the current modulation and the on/off ratio reach 6.7 mAcm-2 and 23,respectively.Meanwhile,the current gain is 95-96 in our experiment,which is almost independent on the injection efficiency.Pentacene-based metal-base organic transistors（MBOTs） are fabricated.The influence of the charge carrier injection efficiency at the emitter electrode/emitter interface on the device performance is investigated.It is found that the current modulation and the on/off ratio increase with the injection efficiency.By inserting poly（3,4-ethylenedioxythiophene）（PEDOT）：PSS/m-MTDATA layers at the emitter electrode/emitter interface,the current modulation and the on/off ratio reach 6.7 mAcm-2 and 23,respectively.Meanwhile,the current gain is 95-96 in our experiment,which is almost independent on the injection efficiency.

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分 类 号：TN32[电子电信—物理电子学]