Bi_2Te_3基热电材料的微观结构与电学性能(英文)  

Electrical Properties and Microstructures of the Bi_2Te_3-based Materials

作　　者：王晓琳[1] 姜洪义[1] 任卫[2] 

机构地区：[1]武汉理工大学材料学院,湖北武汉430070 [2]钢铁研究总院,北京100081

出　　处：《材料科学与工程学报》2010年第2期267-270,共4页Journal of Materials Science and Engineering

基　　金：National High Technology Research and Development Program of China(863 Program)under grant NO.2007AA03Z232

摘　　要：用粉末冶金工艺结合SPS烧结制备了n型Bi2(Te0.975Se0.025)3和p型(Bi0.2Sb0.8)2Te3多晶半导体合金,并通过XRD衍射分析和SEM观察等方法研究其在不同方向上的微观结构,测试了其热电性能。结果表明试样的电导率随烧结温度的增加而减小,试样内部的晶粒具有明显的取向,材料的电学性能也同样具有各向异性的性质。N-type Bi2（Te 0.975 Se 0.025）3 and p-type（Bi 0.2 Sb 0.8）2Te3 polycrystalline thermoelectric alloys were prepared by powder metallurgy method and spark plasma sintering at 673-773 K under 50 MPa for 10 minutes.The samples were characterized by X-ray diffractiometry,scanning electron microscopy,and the electrical resistivity and Seebeck coefficient were measured.The effects of hot pressing process on the electrical transport properties were studied.The results show that the electrical transport properties of Bi2Te3-based materials are reduced by sintering at 673 K and 773 K.The grains of the hot-pressed alloys are preferentially oriented.The hot-pressed alloys are anisotropy in the microstructures and electrical properties.

关 键 词：Bi2(Te0.975Se0.025)3 (Bi0.2Sb0.8)2Te3 晶体结构 

分 类 号：O482.6[理学—固体物理]