Mode control in a high-gain relativistic klystron amplifier  

作　　者：李正红 张红 鞠炳全 苏昶 吴洋 

机构地区：[1]Institute of Applied Electronics,China Academy of Engineering Physics [2]Institute of Electronic Engineering,China Academy of Engineering Physics

出　　处：《Chinese Physics C》2010年第5期598-602,共5页中国物理C（英文版）

基　　金：Supported by NSFC(10347009)

摘　　要：Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes＇ excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 10^5 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes＇ excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 10^5 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

关 键 词：high power MICROWAVE mode control microwave device 

分 类 号：TN722[电子电信—电路与系统]