硅锗薄膜上量子点的受激发光  

Stimulated Emission in Quantum Dots formed by Pulsed Laser on SiGe Film

作　　者：黄伟其[1] 吕泉[1] 张荣涛[1] 王晓允[1] 刘世荣[2] 秦朝建[2] 

机构地区：[1]贵州大学贵州省光电子技术与应用重点实验室,贵州贵阳550025 [2]中国科学院地球化学研究所,贵州贵阳550003

出　　处：《光学学报》2010年第4期1088-1091,共4页Acta Optica Sinica

基　　金：国家自然科学基金(10764002,60966002)资助课题

摘　　要：脉冲激光在SiGe合金样品表面可以形成量子点结构。样品退火处理后,在720～800 nm光谱区域内存在一些受激发射峰,并且这些受激发射峰有明显的阈值行为。实验发现从Si量子点到SiGe量子点结构的变化将导致受激发光峰有明显的红移现象。由傅里叶变换红外光谱仪(FTIR)分析得到:SiGe合金上氧化层中的量子点同时含有Si=O和Ge=O双键结构,这种结构可以形成电子的局域陷阱态(或陷阱态的激子)。计算显示:在SiGe量子点中Ge=O双键可以减小半导体样品中价带和局域陷阱态之间的距离。这就解释了SiGe量子点受激发射的红移现象。Fabrication of quantum dots（QD） by pulsed laser on SiGe alloy samples is reported.After annealing, some peaks of stimulated emission were observed in the region of 720～800 nm which have threshold behavior obviously.It was found that the peaks of stimulated emission have an obvious red-shift from Si QD to SiGe QD.Oxide layer on SiGe quantum dots involves Si=O bonds and Ge=O bonds according to the Fourier transform infrared spectroscopy（FTIR）,which could produce the localized gap states of electrons（or even the trapped exciton）. Calculation shows that Ge=O bonds emerging on SiGe QD could decrease the distance between the valence band and the localized gap states which can interpret the red-shift of stimulated emission on SiGe QD.

关 键 词：SiGe量子点 受激发射 陷阱态 红移 

分 类 号：TN249[电子电信—物理电子学]