Influence of thermal effect on multi-junction GaInP/GaAs/Ge concentrating photovoltaic system  

作　　者：徐钦峰 叶青 瞿荣辉 方祖捷 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences

出　　处：《Chinese Optics Letters》2010年第4期354-356,共3页中国光学快报（英文版）

基　　金：supported by the Shanghai Rising-Star Program(No.09QB1400700) ;the Knowledge Innovation Program of the Chinese Academy of Sciences(No. 0903531)

摘　　要：The influence of thermal effect on the energy conversion efficiency of concentrating photovoltaic system for multi-junction GaInP/GaAs/Ge thin-film solar cell is analyzed experimentally.With the increment of operation temperature,the maximal energy conversion efficiency and optimal loaded resistor will be changed.Under the condition of operation temperature lower than 90℃.this influence of thermal effect is very small.However,when the operation temperature exceeds 90℃,the maximal conversion efficiency of the cells will decrease sharply,and contrarily the corresponding optimal loaded resistor will increase quickly.Then the system performance will degenerate badly and a thermal management will be necessary.The influence of thermal effect on the energy conversion efficiency of concentrating photovoltaic system for multi-junction GaInP/GaAs/Ge thin-film solar cell is analyzed experimentally.With the increment of operation temperature,the maximal energy conversion efficiency and optimal loaded resistor will be changed.Under the condition of operation temperature lower than 90℃.this influence of thermal effect is very small.However,when the operation temperature exceeds 90℃,the maximal conversion efficiency of the cells will decrease sharply,and contrarily the corresponding optimal loaded resistor will increase quickly.Then the system performance will degenerate badly and a thermal management will be necessary.

关 键 词：Energy conversion OPTIMIZATION Photovoltaic effects RESISTORS Solar energy Solar power generation 

分 类 号：TM914.4[电气工程—电力电子与电力传动]