Improvement of A1N Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy  

作　　者：张辰 郝智彪 任凡 胡健楠 罗毅 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics//Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084

出　　处：《Chinese Physics Letters》2010年第5期247-249,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60536020 and 60723002, the National Basic Research Program of China under Grant Nos 2006CB302800 and 2006CB921106, the National High-Technology Research and Development Program of China under Grant No 2006AA03A105, and Major Project of Beijing Municipal Science and Technology Commission （No D0404003040321）.

摘　　要：The influence of nucleation coalescence on the crystalline quality of A1N films grown on sapphire by plasma- assisted molecular beam epitaxy is investigated. The coalescence speed is controlled by the V/Ⅲ ratio chosen for the growth after nucleation. A slightly Al-rich condition, corresponding to slow coalescence, can significantly reduce the density of edge threading dislocation （TD）, which is found to be dominant in AIN epilayers. The cross-sectional TEM image of the AIN epilayer grown under this condition clearly reveals an automatically formed boundary where an abrupt decrease of edge TD density occurs.The influence of nucleation coalescence on the crystalline quality of A1N films grown on sapphire by plasma- assisted molecular beam epitaxy is investigated. The coalescence speed is controlled by the V/Ⅲ ratio chosen for the growth after nucleation. A slightly Al-rich condition, corresponding to slow coalescence, can significantly reduce the density of edge threading dislocation （TD）, which is found to be dominant in AIN epilayers. The cross-sectional TEM image of the AIN epilayer grown under this condition clearly reveals an automatically formed boundary where an abrupt decrease of edge TD density occurs.

分 类 号：TQ174.756[化学工程—陶瓷工业] O484.1[化学工程—硅酸盐工业]