Extrinsic Base Surface Passivation in High Speed ＂Type-II＂ GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure  

作　　者：刘洪刚 金智 苏永波 王显泰 常虎东 周磊 刘新宇 吴德馨 

机构地区：[1]Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029

出　　处：《Chinese Physics Letters》2010年第5期261-263,共3页中国物理快报（英文版）

摘　　要：Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.

分 类 号：TN248.4[电子电信—物理电子学] TN304.23