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机构地区:[1]东南大学MEMS教育部重点实验室,南京210096
出 处:《仪器仪表学报》2010年第4期944-950,共7页Chinese Journal of Scientific Instrument
基 金:国家863计划(2007AA04Z342)资助项目
摘 要:以硅(100)衬底为基础,详细介绍了一种针对体硅湿法加工中各向异性腐蚀带来的凸角切削现象的理论分析方法,指出了凸角切削现象具有唯一性和方向性的结论。该方法首先对凸角侧边类型进行划分,再利用现有理论资源,对凸角侧边和切削方向在凸角顶点的折算速率进行严格的数学计算和比较,最终确定腐蚀结束后的形变结构。选择了正五边形以及不规则六边形为代表,展示了该方法的实现过程,最后给出的模拟和实验结果都证实了该方法的正确有效。A conclusion that the convex comer undercutting phenomenon during the silicon wet anisotropic etching process has its own directivity has been presented based on detailed investigation of (100) faced silicon substrate. Additionally, a theoretical analysis method for forecasting the deformed structure after the etching process has been developed. Firstly, we divide the structure borders into eight different classes according to their relative positions and map each class into a unique undercutting direction. Secondly, based on the existing research findings, the border etching rate, as well as the undercutting directions can be converted into the rate of the comer apex respectively. Comparing the two converting rates shows that the higher rate dominates the final undercutting profile. A regular pentagon and a transverse stretched hexagon are taken as samples to display the analysis process. Simulation results and experiment results are finally given to prove the validity of this method.
分 类 号:TG760.6[金属学及工艺—刀具与模具]
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