有机Co/Alq_3/La_(1-x)Sr_xMnO_3(LSMO)器件磁电阻的温度效应研究  

Study on the temperature effect of magnetoresistance in organic device Co/Alq_3/La_(1-x)Sr_xMnO_3 (LSMO)

作　　者：秦伟[1] 张玉滨[1] 解士杰[1] 

机构地区：[1]山东大学物理学院,晶体材料国家重点实验室,济南250100

出　　处：《物理学报》2010年第5期3494-3498,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2009CB929204和2010CB923402);国家自然科学基金(批准号:10874100)资助的课题~~

摘　　要：根据最近关于温度对有机磁电阻影响的实验研究,利用漂移-扩散方程,计入温度对极化子迁移率和自旋弛豫时间的影响,研究了有机半导体中自旋极化率随温度的变化,进而利用Julliere公式给出器件的磁电阻.发现,在温度较低的区域磁电阻减小幅度大于温度较高的区域,磁电阻随温度变化的主要因素为自旋弛豫时间.最后将计算结果与实验数据作了比较,得到与实验相符合的结果.According to the latest experiments about the temperature effect of organic magnetoresistance,we employed a drift-diffusion equation and take into account the temperature influence on mobility and spin relaxation to investigate spin polarization and magnetoresistance of the organic semiconductor device. We found that the magnetoresistance in low temperature region decreases faster than that in high temperature region. The change of magnetoresistance with temperature is mainly dependent on spin relaxation time of organic layer. Finally,the theoretical calculation was compared with experimental data and consistency between them was obtained.

关 键 词：有机自旋电子学 极化子 温度 磁电阻 

分 类 号：O469[理学—凝聚态物理]