Fabrication of a 256-bits organic memory by soft x-ray lithography  

作　　者：刘兴华 鲁闻生 姬濯宇 涂德钰 朱效立 谢常青 刘明 

机构地区：[1]Microfabrication and Nanotechnology Lab,Institute of Microelectronics,Chinese Academy of Sciences [2]Key Laboratory of Colloid and Interface Science,Center of Molecular Sciences,Institute of Chemistry,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第5期499-504,共6页中国物理B（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB806204);National Natural Science Foundation of China (Grant Nos. 60825403,90607022,60676001 and 60676008);Synchrotron Radiation Fund of Innovation Project of Ministry of Education of China (Grant No. 20070156S)

摘　　要：This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.

关 键 词：molecular memory crossbar array soft x-ray lithography electron beam lithography 

分 类 号：O434.1[机械工程—光学工程] TN305.7[理学—光学]