一种三电平IGBT逆变器吸收电路的研究  

Research on a Snubber Circuit for Three-level IGBT Inverter

作　　者：王俊炎[1] 胡安[1] 孙驰[1] 

机构地区：[1]海军工程大学电力电子技术研究所,武汉430033

出　　处：《船电技术》2010年第4期1-6,共6页Marine Electric & Electronic Engineering

基　　金：国家自然科学基金资助项目(50607020);国家自然科学基金资助项目(50737004)

摘　　要：本文指出了一种三电平IGBT逆变器简化吸收电路工作时存在的两种瞬时短路过电流现象,对此短路电流产生的原因进行了分析;提出了一种用于二极管箝位型三电平主电路半桥测试方法,该方法模拟了三电平电路含有死区时间的各种实际开关工作状态。利用该测试方法,对该吸收电路进行了测试,仿真和实验证实了此短路电流的存在及该测试方法的有效性。In this paper, two kinds of current overshoot phenomenon in a snubber circuit for three-level IGBT inverter are indicated. The reasons for this over-current are analyzed. A new testing method for diode clamping three-level inverter is proposed. In this method, the three-level circuit contains a variety of dead-time of the actual switching state is simulated. It is proved by Simulation and prototype experimental results that the testing method proposed is validly and feasibly.

关 键 词：三电平逆变器 吸收电路 测试方法 

分 类 号：TM464[电气工程—电器]