GaAs MESFET 全频域谐波平衡分析  

GaAs MESFET entire domaim harmonic balance aralysis

作　　者：郦华才 孙斌[2] 

机构地区：[1]杭州教育学院 [2]浙江大学信电系

出　　处：《浙江大学学报（自然科学版）》1998年第4期497-507,共11页

摘　　要：本文分析了ＧａＡｓＭＥＳＦＥＴ非线性电路模型，利用全频域谐波平衡分析法对其进行谐波平衡分析．首先根据ＦＥＴ的Ｓ参数利用负载牵引分析方法导出其内部参数，然后通过ＦＥＴ的直流特性利用最小二乘拟合法求出非线性模拟系数，最后根据其数学模型分析ＦＥＴ的谐波功率、谐波电压、以及各次谐波功率与频率、阻抗的关系．In terms of the Entire Domain Harmonic Balance Analysis,the Model of the non linear circuit GaAs MESFET is developed. According to the scattering parameters of FET,the Approach of Load Drawing is used to find out its inner parameters.Using the method of Least Square Fitting from the static properties of FET to get the non linear simulating coefficients and finally,according to its mathematical model to analyze the harmonic components of power and voltage of FET as well as these components as the functions of the frequencies and resistances.

关 键 词：微波非线性电路 谐波平衡 分频域 S参数 

分 类 号：TN132[电子电信—物理电子学]