三源真空蒸发CuInSe_2薄膜的性能  

Performance of CuIuSe_2 thin films by trisource vacuum co-evaporation

作　　者：涂洁磊[1] 刘祖明[1] 廖华[1] 陈庭金[1] 王东城[1] 

机构地区：[1]云南师范大学,昆明650092

出　　处：《半导体光电》1998年第2期123-123,127,132,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金!59162002

摘　　要：详细分析讨论了用三源真空蒸发法制取CuInSe2薄膜过程中，源温、衬底温度及Cu，In原子比值对薄膜性能的影响。In this paper an influence of preparing conditions, such as temperature of source and substrate, and Cu-In atomic ratio, on the performance of CuInSe2 thin films by trisource vacuum coevaporation is discussed in deail.

关 键 词：半导体薄膜材料 太阳电池 三元化合物 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TN304.26[电子电信—物理电子学]