具有陷波电路结构的P波段低温低噪声放大器  

Cryogenic low noise amplifier with output trap circuit for P Band

作　　者：陈毅东[1] 张晓平[1] 李明杰[1] 郭旭波[1] 魏斌[1] 曹必松[1] 

机构地区：[1]清华大学物理系,北京100084

出　　处：《低温与超导》2010年第4期1-4,共4页Cryogenics and Superconductivity

摘　　要：该文的工作是设计和制作了一种具有陷波电路结构的P波段低温低噪声放大器。在低温75K环境下,工作频段为250-350MHz的范围内,该低温低噪声放大器具有优异的性能,噪声系数小于0.4dB,增益为14.4dB,增益平坦度小于0.05dB,输入反射损耗S11<-20dB,输出反射损耗S22<-20dB。同时在工作频段外的高温超导滤波器寄生通带内,该低温低噪声放大器成功实现了传输陷波响应,加强了系统对前端高温超导滤波器产生的寄生通带的衰减和抑制。A cryogenic low noise amplifier （CLNA） with output trap circuit for P band was designed and fabricated. At 75K, in the frequency band from 250MHz to 350MHz, the CLNA exhibited high performance： the noise figure was lower than 0. 4dB, the gain is 14dB, the gain flatness was within 0.05dB, the maximum input and output return losses were both better than -20dB. Meanwhile, the trap wave point of the CLNA was successfully designed to be at the desired spurious passband of the high temperature superconducting （HTS） filter, which could help to achieve excellent spurious suppression of the whole system.

关 键 词：低噪声放大器 低温 陷波电路 高温超导滤波器 

分 类 号：TN722.3[电子电信—电路与系统]