静态随机存储器抗总剂量辐射性能筛选在线测试系统  

The Manufacture of System for Testing Static Random Access Memory Total Dose Radiation Effect

作　　者：于跃[1,2] 郭旗[2] 任迪远[2] 李鹏伟[1,2] 

机构地区：[1]中国科学院研究生院,北京100083 [2]中科院新疆理化所,乌鲁木齐830011

出　　处：《核电子学与探测技术》2010年第3期328-331,389,共5页Nuclear Electronics & Detection Technology

摘　　要：研制了一套SRAM总剂量辐射效应在线测试系统,该系统可同时对多个SRAM器件进行总剂量辐照效应在线测试,获得在γ辐照环境中静态功耗电流和出错数随总剂量的变化关系。进行了实际的SRAM器件辐照试验,测量得到了不同批次参数辐射响应的差异,并分析SRAM静态功耗电流和出错数受γ辐照的损伤机理。The online test system of SRAM total dose radiation effects has been introduced. The system can test many SRAM devices simultaneously and get the static power current and error counts at various γ doses. The experiments of ionizing radiation were performed, the radiation responses of parameters in different batches were measured and the damage mechanisms of static power current and error count under γ irradiations were studied.

关 键 词：SRAM 测试系统 60Coγ总剂量 损伤机理 

分 类 号：TN4[电子电信—微电子学与固体电子学]