真空蒸发镀膜制备MIM隧道发光结的实验研究  

A Study on the MIM Light-emission Tunneling Junction Fabricated by Vacuum Evaporation

作　　者：王茂祥[1] 孙承休[2] 俞建华[2] 刘柯林[2] 

机构地区：[1]东南大学物理系,东南大学电子工程系南京210096 [2]东南大学电子工程系,南京210096

出　　处：《真空科学与技术》1998年第5期369-372,共4页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：采用真空蒸发镀膜方法制备了MIM隧道发光结。对MIM隧道发光结的制备工艺进行了分析，阐述了各膜层的制备特点，描述了所制备的MIM结的发光特性，简单讨论了与发光相伴随的I-U特性曲线上的负阻现象。The MIM light-emission tunneling junctions were fabricated by evopration film-coating fillns in vacuum. The fabrication technology was discussed in detail. The charcteristics of the structure of the junctions were analyzed and the properties of the negative resistance in the I-U curves were also discussed.

关 键 词：MIM结 真空蒸发镀膜 制备工艺 发光特性 

分 类 号：TN305.8[电子电信—物理电子学]