双层减反射膜镀制半导体光放大器  

Fabrication of the Semiconductor Optical Amplifiers with Double-layer Antireflection Coatings

作　　者：罗斌[1] 吕鸿昌[1] 卢玉村[2] 陈建国[2] 

机构地区：[1]西南交通大学,成都610031 [2]四川联合大学,成都610064

出　　处：《真空科学与技术》1998年第1期33-37,共5页Vacuum Science and Technology

摘　　要：首次采用ZnSe和MgF2双层减反射膜镀制半导体光放大器，分别测出了两端面的剩余反射比曲线。结果表明，该放大器两端面反射比乘积最小值低于1×10－6，按照O’Mahoney给出的判据，其可用行波单程增益为22dB。Semiconductor optical amplifiers were successfully fabricated for the first time by using double layer antireflection coatings of ZnSe and MgF2. The variation in residual facet reflectivity with wavelength at both end facets was studied.The product of the minimum residual facet reflectivity at both end facets was found to be lower than 1×10-6.According to the criteria given by O' Mahoney, when used as a TWA, its usable single pass gain can be 22 dB.

关 键 词：双层减反射膜 半导体 光放大器 反射比 

分 类 号：TN305.8[电子电信—物理电子学]