M-Z型LiNbO_3外调制器的优化设计分析  

Design Optimization of M-Z LiNbO_3 Modulators

作　　者：李刚毅[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2010年第2期194-198,共5页Semiconductor Optoelectronics

摘　　要：阐述了以M-Z干涉型光波导为波导结构、铌酸锂(LiNbO3)材料电光效应为基础的集成光学强度调制器的工作原理及器件结构,讨论了集成光学强度调制器性能指标,重点讨论了干涉型行波电极结构LiNbO3外调制器的优化设计思想。For integrated optical intensity modulator based on M-Z optical waveguide and electro-optic effect of LiNbO3, its working principles and structures are presented and the indexes effecting its performance are discussed. An optimization of the design of a traveling-wave LiNbO3 interference modulators is discussed.

关 键 词：M-Z干涉型光波导 电光效应 集成光学强度调制器 

分 类 号：TN256[电子电信—物理电子学]