光电化学刻蚀n型多孔硅过程中的介质增强荧光效应  

Photoluminescent Enhancement of N-type Porous Silicon by Adding Titanium Sol During the Photoelectrochemically Etching Process

作　　者：于磊[1] 李怀祥[1] 于凯[1] 

机构地区：[1]山东师范大学化学化工与材料科学学院,山东济南250014

出　　处：《纳米科技》2010年第2期57-62,共6页

基　　金：国家自然科学基金项目（No：60671010、20775045）; 山东省自然科学基金目（Y2006B29）

摘　　要：光电化学阳极刻蚀n型单晶硅过程中,在电解液中加入适量钛溶胶,制得多孔硅（PS）,经荧光光谱（PL）检测,发光强度明显增强;傅里叶红外光谱（FT-IR）检测发现,在多孔硅结构中出现了亚甲基的伸缩振动吸收;用扫描电镜（SEM）和X射线光电子能谱（XPS）表征手段对其进行表征,发现表面的裂缝区域明显加大。在Fe（CN）63＋/Fe（CN）64-溶液中的测量了复合电极的光电流-电压关系,结果显示,用添加钛凝胶制备的多孔硅电极具有更好的光电流特性。The intensity of fluorescence spectroscopy of porous silicon （PS） can be enhanced by adding an appropriate amount of titanium in the electrolyte sol during the photoelectrochemical etching of n-type silicon anode process. Fourier transformed infrared （FTIR） spectra showed that antisymmetrical and symmetrical stretching of methylene C-H modes emerges at 2854 and 2928 cm-1 for the modified porous silicon sample. Scanning electron microscopy （SEM） images indicated that there are more detached zones in the modified porous silicon surface than that in generally etched porous silicon samples. Oxygen, carbon and silicon were detected by X-ray photoelectron spectroscopy （XPS）, which were main compositions on the surface of the modified porous silicon. A composite electrode has formed by coating some Ti sol on the surface of normal or modified porous silicon. As a result, the composite electrode based on the modified porous silicon showed better photoelectrochemical characteristics than that of normal porous silicon according to the photocurrentvoltage curves obtained from an Fe（CN）63-/ Fe（CN）64-aqueous solution.

关 键 词：多孔硅 光致荧光 钛溶胶 

分 类 号：O644.11[理学—物理化学]